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| 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 SST1LP124.9-5.8 GHz High-Linearity Power Amplifier Data Sheet FEATURES: * High gain * High linear output power: - Meets 802.11a OFDM Spectrum Mask requirement up to 24 dBm over the entire band - Added EVM <4% up to 21 dBm for 54 Mbps 802.11a signal * High power-added efficiency/Low operating current for 6 Mbps 802.11a applications - ~17% @ POUT = 23 dBm for 6 Mbps * Built-in Ultra-low IREF power-up/down control - IREF <3 mA * Low idle current - ~150 mA ICQ * High speed power up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * * * * * * High temperature stability Low shut-down current (~2 A) On-chip power detection 20 dB dynamic range on-chip power detection Simple input/output matching Packages available - 16-contact WQFN (3mm x 3mm) - Non-Pb (lead-free) packages available APPLICATIONS: * * * * WLAN (IEEE 802.11a) Japan WLAN HyperLAN2 Multimedia PRODUCT DESCRIPTION The SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.8 GHz). The SST11LP12 has excellent linearity, typically <4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 24 dBm. SST11LP12 also has wide-range (>20 dB), temperature-stable (~1 dB over 85C), singleended/differential power detectors which lower users' cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF <3 mA) makes the SST11LP12 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11LP12 ideal for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applications. The SST11LP12 is offered in 16-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet FUNCTIONAL BLOCKS VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 2 3 4 5 NC 15 13 12 NC 11 RFOUT 10 RFOUT Bias Circuit 6 VREF 7 VREF 8 Det_ref NC 9 Det 1278 B1.1 FIGURE 1: Functional Block Diagram (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 2 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet PIN ASSIGNMENTS VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 15 13 12 NC Top View 2 3 4 RF and DC GND 0 5 NC 6 VREF 7 VREF 8 Det_ref 1278 16-wqfn P1.0 NC 11 RFOUT 10 RFOUT 9 Det (contacts facing down) FIGURE 2: Pin Assignments for 16-contact WQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol GND NC RFIN RFIN VCCb NC VREF VREF Det_ref Det RFOUT RFOUT NC NC VCC3 VCC2 VCC1 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 No Connection No Connection Power Supply Power Supply Power Supply PWR PWR PWR Power Supply No Connection PWR PWR O O O O Pin Name Ground No Connection I I PWR Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Unconnected pin RF input, DC decoupled RF input, DC decoupled Supply voltage for bias circuit Unconnected pin Current Control Current Control On-chip power detector reference On-chip power detector RF output RF output Unconnected pin Unconnected pin Power supply, 3rd stage Power supply, 2nd stage Power supply, 1st stage T1.1 1278 1. I=Input, O=Output (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 3 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 3 through 8 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 14, 15, 16 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.8V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds OPERATING RANGE Range Industrial Ambient Temp -40C to +85C VCC 3.3V TABLE 2: DC Electrical Characteristics Symbol VCC ICC ICQ IOFF VREG Parameter Supply Voltage at pins 4, 14, 15, 16 Supply Current @ POUT = 23 dBm at VCC = 3.3V VCC quiescent current Shut down current Reference Voltage for recommended application 150 <1.0 2.85 3.0 Min. 2.7 Typ 3.3 Max. 3.6 400 Unit V mA mA A V T2.0 1278 Test Conditions (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 4 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet TABLE 3: AC Electrical Characteristics for Configuration1 Symbol FL-U Parameter Frequency range Output power with <4% EVM at 54 Mbps OFDM signal when operating at 3.3V VCC Output power level with 802.11a mask compliance across 4.9-5.8 GHz Gain over band (4.9-5.1 MHz) G Det Det_ref 2f, 3f, 4f, 5f Gain over band (5.3-5.5 MHz) Gain over band (5.7-5.8 MHz) Power detector output voltage range Power detector output reference Harmonics at 22 dBm, without trapping capacitors 0.5 0.5 0.6 -50 Min 4.9 21 23 33 31 27 2.0 Typ Max 5.8 Unit GHz dBm dBm dB dB dB V V dBc T3.1 1278 Linearity 1. Performance is only valid using the recommended schematic. VCC = 3.3V, VREG = 2.85, Temperature = 25C (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 5 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25C, VREG1,2 = 2.85V unless otherwise noted S11 versus Frequency 0 -5 0 -10 -20 S12 versus Frequency -10 S11 (dB) -20 -25 -30 -35 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 S12 (dB) Frequency (GHz) S21 versus Frequency -15 -30 -40 -50 -60 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) S22 versus Frequency 0 -5 -10 40 30 20 S21 (dB) 0 -10 -20 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 S22 (dB) Frequency (GHz) 10 -15 -20 -25 -30 -35 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) 1278 S-Parms.0.1 FIGURE 3: S-Parameters (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 6 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25C, VREG = 2.85V unless otherwise specified EVM for 54 Mbps operation EVM versus Output Power 10 9 8 7 4.920 GHz 5.180 GHz 5.500 GHz 5.805 GHz EVM (%) 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 1278 F4.1 Output Power (dBm) FIGURE 4: EVM versus Output Power Supply Current versus Output Power 410 400 390 380 370 360 350 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 0 1 2 3 4 5 6 7 8 Supply Current (mA) 4.920 GHz 5.180 GHz 5.500 GHz 5.805 GHz 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 1278 F5.2 Output Power (dBm) FIGURE 5: Power Supply Current versus Output Power (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 7 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet Detector Voltage versus Output Power 1.70 1.60 1.50 Detector Voltage (V) 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 1278 F6.2 4.920 GHz 5.500 GHz 5.500 GHz 5.805 GHz Output Power (dBm) FIGURE 6: Detector Voltage versus Output Power Power Gain versus Output Power 36 34 32 Power Gain (dB) 30 28 26 24 22 20 18 16 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 4.920 GHz 5.180 GHz 5.500 GHz 5.805 GHz Output Power (dBm) 1278 F7.2 FIGURE 7: Power Gain versus Output Power (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 8 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet PAE versus Output Power 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 9 10 11 4.920 GHz 5.180 GHz 5.500 GHz 5.805 GHz PAE (%) 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1278 F9.0 FIGURE 8: PAE versus Output Power TABLE 4: 802.11a 6Mbps OFDM Mask Compliance Power Frequency (GHz) 4.920 5.180 5.500 5.805 802.11a 6Mbps OFDM Mask Compliance Power (dBm) 24 23.8 23.5 23 T4.0 1278 (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 9 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet VCC 25 3.3 pF 10 F 0.1 F 0.1 F 0-20 mil 0.1 F 16 1 15 14 13 12 0.1 pF ** 50 80 mil/60 mil 50 2 11 RFin 0.3 pF* RFOUT 3 10 0.4 pF ** Bias Circuit 4 0.1 F 9 5 6 7 8 10 pF Test Conditions VREG = 2.85V VCC=3.3V 0 * Distance from the edge of the package to the edge of the 0.3 pF capacitor = 40 mil **Distance from the edge of the output patch to the edge of the 0.1 pF /0.4 pF capacitors = 40 mil 100 pF 10 pF Det_ref VREF Det 1278 Schematic.0.5 FIGURE 9: Recommended Schematic for High-Power 802.11a Application (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet PRODUCT ORDERING INFORMATION SST11LP SSTXXLP 12 XX QC XX F X Environmental Attribute F1 = non-Pb / non-Sn contact (lead) finish: Nickel plating with Gold top (outer) layer Package Modifier C = 16 contact Package Type Q = WQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 1 = 4.9-5.8 GHz Product Line 1 = SST Communications 1. Environmental suffix "F" denotes non-Pb/non-Sn solder. SST non-Pb/non-Sn solder devices are "RoHS Compliant". Valid combinations for SST11LP12 SST11LP12-QCF SST11LP12 Evaluation Kits SST11LP12-QCF-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 11 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet PACKAGING DIAGRAMS TOP VIEW SIDE VIEW 0.2 BOTTOM VIEW See notes 2 and 3 Pin 1 1.7 Pin 1 3.00 0.075 1.7 0.075 3.00 0.075 0.05 Max 0.80 0.70 0.30 0.18 0.5 BSC 0.45 0.35 1mm Note: 1. Complies with JEDEC JEP95 MO-220J, variant WEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). 16-wqfn-3x3-QC-0.3 FIGURE 10: 16-contact Very-thin Quad Flat No-lead (WQFN) SST Package Code: QC TABLE 5: Revision History Revision 00 01 Description Date Jan 2005 Jan 2006 * * * * * * * * * * * 02 03 04 S71278: SST conversion of data sheet GP1112 Corrected the spectrum mask value in "Product Description" on page 1 to read 802.11a Corrected the solder reflow temperature under "Absolute Maximum Stress Ratings" on page 4 Updated sales and marketing contact information Changed VQFN to WQFN Updated Product Ordering information Updated Table 3 on page 5. Updated document status from Preliminary Specifications to Data Sheet Revised gain values in "Features:" and "Product Description" on page 1 and in Table 3 on page 5 Updated "" on page 12 Updated Features, Table 2, Table 3, Table 4, and Figures 4-9 to indicate improved RF performance. Mar 2008 Feb 2009 Dec 2010 Silicon Storage Technology, Inc. www.SuperFlash.com or www.sst.com (c)2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 12 |
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